Origin of oxygen vacancies in resistive switching memory devices

被引：16

作者：

Andreasson, B. P. ^{[1
]}

Janousch, M. ^{[1
]}

Staub, U. ^{[1
]}

Meijer, G. I.

Ramar, A.

Krbanjevic, J.

Schaeublin, R.

机构：

[1] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

来源：

14TH INTERNATIONAL CONFERENCE ON X-RAY ABSORPTION FINE STRUCTURE (XAFS14), PROCEEDINGS | 2009年 / 190卷

关键词：

RESISTANCE;

D O I：

10.1088/1742-6596/190/1/012074

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The resistive switching state in Cr-doped SrTiO3 was induced by applying an electric field. This was done in ambient air and in an atmosphere of H-2/Ar. The distribution of the thereby introduced oxygen vacancies was studied by spatially resolved X-ray fluorescence images. It was concluded that the oxygen vacancies were introduced in the interface between the SrTiO3 and the positively biased electrode.

引用

页数：6

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