Growth, Thermodynamics, and Electrical Properties of Silicon Nanowires

Growth, thermodynamics, and electrical properties of silicon nanowires have been reported. The name vapor-liquid-solid (VLS) mechanism reflects the pathway of Si, which coming from the vapor phase diffuses through the liquid droplet and ends up as a solid Si wire. The VLS mechanism has numerous direct and indirect implications for Si wire growth. High temperature CVD Si wire growth experiments are often performed in tubular hot wall reactors. The VLS mechanism has several interesting implications for the thermodynamics of the wire growth. The diameter expansion at the wire base is one of these implications. a reduction of the ionization efficiency can be expected to have a major influence on the electric characteristics of the nanowires. The last major uncertainty for correlating resistivity with doping concentration is the charge carrier mobility. Charge carrier mobility depends on both dopant type and concentration.