Effective doping of single-layer graphene from underlying SiO2 substrates

被引：180

作者：

Shi, Yumeng ^{[1
]}

Dong, Xiaochen ^{[1
,2
]}

Chen, Peng ^{[2
]}

Wang, Junling ^{[1
]}

Li, Lain-Jong ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

[2] Nanyang Technol Univ, Sch Chem & Biomed Engn, Singapore 637459, Singapore

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 11期

关键词：

carrier density; charge exchange; contact potential; doping; electronic structure; graphene; Raman spectra; silicon compounds; thin films; RAMAN-SCATTERING; PHASE; FIELD; BANDGAP;

D O I：

10.1103/PhysRevB.79.115402

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

When a single-layer graphene (SLG) is on SiO2 substrates, the charge exchange at their interface results in a dipole, which direction strongly depends on the contact potential difference between the SLG and the substrates. Due to the longer experimental charge screening length of SLG than its thickness, the charge redistribution imposes effective p or n doping to SLG films. The substrate-dependent doping of SLG films is further confirmed by Raman and electrical measurements. Also, the unique electronic structures of SLG films make them sensitive to the doping rather than effective gating from the SiO2 substrates.

引用

页数：4

共 29 条

[1] A self-consistent theory for graphene transport [J].

Adam, Shaffique ;

Hwang, E. H. ;

Galitski, V. M. ;

Das Sarma, S. .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2007, 104 (47) :18392-18397

[2] Screening effect and impurity scattering in monolayer graphene [J].

Ando, Tsuneya .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2006, 75 (07)

[3] Raman fingerprint of charged impurities in graphene [J].

Casiraghi, C. ;

Pisana, S. ;

Novoselov, K. S. ;

Geim, A. K. ;

Ferrari, A. C. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[4] Electrostatic field and partial Fermi level pinning at the pentacene-SiO2 interface [J].

Chen, LW ;

Ludeke, R ;

Cui, XD ;

Schrott, AG ;

Kagan, CR ;

Brus, LE .

JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (05) :1834-1838

[5] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[6] Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor [J].

Das, A. ;

Pisana, S. ;

Chakraborty, B. ;

Piscanec, S. ;

Saha, S. K. ;

Waghmare, U. V. ;

Novoselov, K. S. ;

Krishnamurthy, H. R. ;

Geim, A. K. ;

Ferrari, A. C. ;

Sood, A. K. .

NATURE NANOTECHNOLOGY, 2008, 3 (04) :210-215

[7] Surface Potentials and Layer Charge Distributions in Few-Layer Graphene Films [J].

Datta, Sujit S. ;

Strachan, Douglas R. ;

Mele, E. J. ;

Johnson, A. T. Charlie .

NANO LETTERS, 2009, 9 (01) :7-11

[8] Raman spectrum of graphene and graphene layers [J].

Ferrari, A. C. ;

Meyer, J. C. ;

Scardaci, V. ;

Casiraghi, C. ;

Lazzeri, M. ;

Mauri, F. ;

Piscanec, S. ;

Jiang, D. ;

Novoselov, K. S. ;

Roth, S. ;

Geim, A. K. .

PHYSICAL REVIEW LETTERS, 2006, 97 (18)

[9] Screening of a hypercritical charge in graphene [J].

Fogler, M. M. ;

Novikov, D. S. ;

Shklovskii, B. I. .

PHYSICAL REVIEW B, 2007, 76 (23)

[10] Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

← 1 2 3 →