Low threshold current densities for II-VI lasers

被引：6

作者：

Strassburg, M ^{[1
]}

Schulz, O

Pohl, UW

Bimberg, D

Klude, M

Hommel, D

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Univ Bremen, D-28359 Bremen, Germany

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 10期

关键词：

D O I：

10.1049/el:20000673

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

II-VI-semiconductor-based, green-light-emitting laser diodes with significantly improved characteristics are reported. Threshold current densities of 42A/cm(2) are obtained. Novel contacts also lead to a 25% reduction in the threshold voltage and to an increased device lifetime by a factor of 24 as compared to previous results.

引用

页码：878 / 879

页数：2

共 12 条

[1] Lateral current spreading in ridge waveguide laser diodes [J].

Achtenhagen, M ;

Hardy, A .

APPLIED PHYSICS LETTERS, 1999, 74 (10) :1364-1366

[2]

Alferov Zh. I., 1988, Soviet Technical Physics Letters, V14, P782

[3]

ALFEROV ZI, 1990, SOV PHYS SEMICOND+, V24, P92

[4] EXCELLENT UNIFORMITY AND VERY LOW (LESS-THAN-50 A/CM2) THRESHOLD CURRENT-DENSITY STRAINED INGAAS QUANTUM-WELL DIODE-LASERS ON GAAS SUBSTRATE [J].

CHAND, N ;

BECKER, EE ;

VANDERZIEL, JP ;

CHU, SNG ;

DUTTA, NK .

APPLIED PHYSICS LETTERS, 1991, 58 (16) :1704-1706

[5] Formation of highly conductive p-type ZnSe using Li3N diffusion [J].

Honda, T ;

Lim, SW ;

Yanashima, K ;

Inoue, K ;

Hara, K ;

Munekata, H ;

Kukimoto, H ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07) :3878-3879

[6] Significant progress in II-VI blue-green laser diode lifetime [J].

Kato, E ;

Noguchi, H ;

Nagai, M ;

Okuyama, H ;

Kijima, S ;

Ishibashi, A .

ELECTRONICS LETTERS, 1998, 34 (03) :282-284

[7] Optimized ZnSe:N/ZnTe:N contact structure of ZnSe-based II-VI laser diodes [J].

Kijima, S ;

Okuyama, H ;

Sanaka, Y ;

Kobayashi, T ;

Tomiya, S ;

Ishibashi, A .

APPLIED PHYSICS LETTERS, 1998, 73 (02) :235-237

[8]

KLUDE M, IN PRESS J CRYST GRO

[9] Doping dependent ZnCdSe/ZnSe-superlattice disordering [J].

Kuttler, M ;

Strassburg, M ;

Stier, O ;

Pohl, UW ;

Bimberg, D ;

Kurtz, E ;

Nurnberger, J ;

Landwehr, G ;

Behringer, M ;

Hommel, D .

APPLIED PHYSICS LETTERS, 1997, 71 (02) :243-245

[10] HIGH P-TYPE DOPING OF ZNSE USING LI3N DIFFUSION [J].

LIM, SW ;

HONDA, T ;

KOYAMA, F ;

IGA, K ;

INOUE, K ;

YANASHIMA, K ;

MUNEKATA, H ;

KUKIMOTO, H .

APPLIED PHYSICS LETTERS, 1994, 65 (19) :2437-2438

← 1 2 →