At-wavelength, system-level flare characterization of extreme-ultraviolet optical systems

被引：13

作者：

Naulleau, P ^{[1
]}

Goldberg, KA

Gullikson, EM

Bokor, J

机构：

[1] Lawrence Berkeley Natl Lab, Ctr Xray Opt, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

APPLIED OPTICS | 2000年 / 39卷 / 17期

关键词：

D O I：

10.1364/AO.39.002941

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The extreme-ultraviolet (EUV) phase-shifting point-diffraction interferometer (PS/PDI) has recently been developed to provide high-accuracy wave-front characterization critical to the development of EW Lithography systems. Here we describe an enhanced implementation of the PS/PDI that significantly extends its measurement bandwidth. The enhanced PS/PDI is capable of simultaneously characterizing both wave front and flare. PS/PDI-based flare characterization of two recently fabricated EUV 10x-reduction Lithographic optical systems is presented. (C) 2000 Optical Society of America. OCIS codes: 090.0090, 110.1650, 110.2970, 120.2650, 120.3180, 120.3940, 120.5820, 260.7200.

引用

页码：2941 / 2947

页数：7

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