Preparation and properties of N-doped p-type ZnO films by solid-source chemical vapour deposition with the c-axis parallel to the substrate

被引：22

作者：

Lü, JG ^{[1
]}

Ye, ZZ ^{[1
]}

Wang, L ^{[1
]}

Zhao, BH ^{[1
]}

Huang, JY ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2002年 / 19卷 / 10期

关键词：

D O I：

10.1088/0256-307X/19/10/329

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on N-doped p-type ZnO films with the c-axis parallel to the substrate. ZnO films were prepared on an alpha-Al2O3 (0001) substrate by solid-source chemical vapour deposition (CVD). Zn(CH3COO)(2)-2H(2)O was used as the precursor and CH3COONH4 as the nitrogen source. The growth temperature was varied from 300degreesC to 600degreesC. The as-grown ZnO film deposited at 500degreesC showed p-type conduction with its resistivity of 42 Omega cm, carrier density 3.7 x 10(17) cm(-3) and Hall mobility 1.26cm(2)V(-1).s(-1) at room temperature, which are the best properties for p-type ZnO deposited by CVD. The p-type ZnO film possesses a transmittance of about 85% in the visible region and a bandgap of 3.21 eV at room temperature.

引用

页码：1494 / 1497

页数：4

共 15 条

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