Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors

被引：20

作者：

Oh, Ji-Young ^{[1
,2
,3
,4
]}

Park, Jonghyurk ^{[3
,4
]}

Kang, Seung-Youl ^{[3
,4
]}

Hwang, Chi-Sun ^{[3
,4
]}

Shim, Hong-Ku ^{[1
,2
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Sch Mol Sci, Taejon 305701, South Korea

[3] Elect & Telecommun Res Inst, IT Convergence & Components, Taejon 305350, South Korea

[4] Elect & Telecommun Res Inst, Mat Res Lab, Taejon 305350, South Korea

来源：

CHEMICAL COMMUNICATIONS | 2009年 / 30期

关键词：

HIGH-PERFORMANCE; ARRAYS;

D O I：

10.1039/b908219k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report a single-step, solution-based synthesis even at room temperature utilizing a facile sonochemical method to fabricate ZnO nanocrystalline films consisting of well-aligned nanorods.

引用

页码：4545 / 4547

页数：3

共 18 条

[1] Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Nunes, G .

APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119

[2] High-performance, spin-coated zinc tin oxide thin-film transistors [J].

Chang, Y. -J. ;

Lee, D. -H. ;

Herman, G. S. ;

Chang, C. -H. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (05) :H135-H138

[3] Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination method [J].

Cheng, Hua-Chi ;

Chen, Chia-Fu ;

Tsay, Chien-Yie .

APPLIED PHYSICS LETTERS, 2007, 90 (01)

[4] Low-temperature wafer-scale production of ZnO nanowire arrays [J].

Greene, LE ;

Law, M ;

Goldberger, J ;

Kim, F ;

Johnson, JC ;

Zhang, YF ;

Saykally, RJ ;

Yang, PD .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) :3031-3034

[5] Aligned ZnO Nanorod Arrays Grown Directly on Zinc Foils and Zinc Spheres by a Low-Temperature Oxidization Method [J].

Gu, Zhanjun ;

Paranthaman, M. Parans ;

Xu, Jun ;

Pan, Zheng Wei .

ACS NANO, 2009, 3 (02) :273-278

[6] Rectifying behavior of electrically aligned ZnO nanorods [J].

Harnack, O ;

Pacholski, C ;

Weller, H ;

Yasuda, A ;

Wessels, JM .

NANO LETTERS, 2003, 3 (08) :1097-1101

[7] ZnO-based transparent thin-film transistors [J].

Hoffman, RL ;

Norris, BJ ;

Wager, JF .

APPLIED PHYSICS LETTERS, 2003, 82 (05) :733-735

[8] A sonochemical method for fabricating aligned ZnO nanorods [J].

Jung, Seung-Ho ;

Oh, Eugene ;

Lee, Kun-Hong ;

Park, Wanjun ;

Jeong, Soo-Hwan .

ADVANCED MATERIALS, 2007, 19 (05) :749-+

[9]

LEVY D, 2007, SOLUTION PROCESSED Z, P16

[10] Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors [J].

Li, Chen-sha ;

Li, Yu-ning ;

Wu, Yi-liang ;

Ong, Beng-S. ;

Loutfy, Rafik-O. .

JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (11) :1626-1634

← 1 2 →