The growth of metallic nanofilaments in resistive switching memory devices based on solid electrolytes

被引:17
作者
Guo, H. X. [1 ,2 ]
Gao, L. G. [1 ,2 ]
Xia, Y. D. [1 ,2 ]
Jiang, K. [1 ,2 ]
Xu, B. [1 ,2 ]
Liu, Z. G. [1 ,2 ]
Yin, J. [2 ,3 ]
机构
[1] Nanjing Univ, Dept Mat Sci & Engn, Nanjing 210093, Peoples R China
[2] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
[3] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China
基金
中国国家自然科学基金;
关键词
focused ion beam technology; MIM devices; nanofabrication; nanostructured materials; platinum; pulsed laser deposition; random-access storage; sandwich structures; silver; silver compounds; solid electrolytes; switching;
D O I
10.1063/1.3118574
中图分类号
O59 [应用物理学];
学科分类号
摘要
Memory cells with sandwich structure based on solid electrolytes Ag30S2P14O42, called ASP, were fabricated on Pt/Ti/Si(001) wafers by using pulsed laser deposition and focused ion beam nanofabrication technique. The current-voltage characteristic of the ASP memory units shows satisfactory switching behaviors. The switching of the devices was explained by the formation and rupture of Ag nanofilaments with the help of bipolar electrical pulses. A simplified model was proposed to describe the growth of the Ag nanofilaments. It was shown that the effective cross section area of the Ag nanofilaments increased at initial stage, then decreased after reaching a maximum until the top and bottom electrodes were connected.
引用
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页数:3
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