Controlling of the surface energy of the gate dielectric in organic field-effect transistors by polymer blend

被引:50
作者
Gao, Jia [1 ,2 ]
Asadi, Kamal [2 ]
Xu, Jian Bin [1 ]
An, Jin [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
[2] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
关键词
organic field effect transistors; organic semiconductors; polymer blends; surface energy; THIN-FILM TRANSISTORS; PENTACENE; PERFORMANCE; LAYER; MORPHOLOGY; MONOLAYERS; ROUGHNESS; INSULATOR; MOBILITY; CELLS;
D O I
10.1063/1.3086894
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, we demonstrate that by blending insulating polymers, one can fabricate an insulating layer with controllable surface energy for organic field-effect transistors. As a model system, we used copper phthalocyanine evaporated on layers of polymethyl metacrylate blended with polystyrene with different blending ratios and measured the field-effect mobility in transistors. We show that the highest field-effect mobility is achieved for identical surface energies of the dielectric and the semiconductor. This simple technique demonstrates the viability of using the blends of insulating polymers to systematically control the surface energy of the gate dielectric toward achieving better performances.
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页数:3
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