High-performance InP/In0.53Ga0.47As/InP double HBTs on GaAs substrates

被引：25

作者：

Kim, YM ^{[1
]}

Dahlstrom, M ^{[1
]}

Lee, S ^{[1
]}

Rodwell, MJW ^{[1
]}

Gossard, AC ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 06期

关键词：

heterojunction bipolar transistor; indium phosphide; metamorphic growth; molecular beam epitaxy;

D O I：

10.1109/LED.2002.1004214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency f(max) and a 207 GHz current-gain cutoff frequency f(tau) were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BVCEO was 5.5 V, while the dc current gain beta was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance.

引用

页码：297 / 299

页数：3

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