Development of low noise, back-side illuminated silicon photodiode arrays

被引：58

作者：

Holland, SE

Wang, NW

Moses, WW

机构：

[1] Lawrence Berkeley National Laboratory, University of California, Berkeley

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1997年 / 44卷 / 03期

基金：

美国国家卫生研究院;

关键词：

D O I：

10.1109/23.603687

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed low noise, high quantum efficiency photodiode arrays for use with positron-emission tomography (PET). A fabrication process developed for high-energy physics detectors was modified to allow for back-side illumination. A back-side contact consisting of a thin (10 nm) n(+) polysilicon layer covered by an indium tin oxide (ITO) antireflection coating (57 nm) results in > 70% quantum efficiency over the wavelength range of 400-1000 nm, The photodiodes are operated fully depleted (300 mu m thick) resulting in a measured capacitance of 3.2 pF and typical leakage currents of 20-50 pA for a 3 mm square element. At room temperature the noise measured at a shaping time of 4 mu s is 140 e(-) rms. When coupled to a CsI(TI) scintillator and excited with 141 keV gamma rays, the energy resolution is 12% fwhm.

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页码：443 / 447

页数：5

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