Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors

被引：8

作者：

Tuttle, BR ^{[1
]}

McMahon, W ^{[1
]}

Hess, K ^{[1
]}

机构：

[1] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 27卷 / 2-3期

基金：

美国国家科学基金会;

关键词：

MOSFETs; field effect transistors;

D O I：

10.1006/spmi.1999.0804

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We explore the hydrogen-related microstructures involved in,hot electron defect creation at the Si(100)-SiO2 interface of metal-oxide semiconductor: held effect transistors. With ab initio density functional calculations, the energetics and defect levels have been calculated for hydrogen in bulk silicon, bulk silicon dioxide and at their, interface. We relate these calculations to several experiments and suggest a microscopic model for hydrogen-related hot electron degradation. (C) 2000 Academic Press.

引用

收藏

页码：229 / 233

页数：5

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