Possibility of quasi-single-crystalline semiconductor films

被引:9
作者
Noguchi, T [1 ]
Usui, S [1 ]
Gosain, DP [1 ]
Ikeda, Y [1 ]
机构
[1] Sony Corp, Frontier Sci Labs, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan
来源
AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷
关键词
D O I
10.1557/PROC-557-213
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The existence of a novel tetrahedral semiconductor Quasi-Single-Crystalline (QSC) phase is posited. In the QSC semiconductor phase, the films consist of grains with a diamond structure of tetrahedral elements, such as Si, Ge and C, and the grains have a preferred orientation, such as < 111 > or < 100 > normal to the film. The lattices perpendicular to the grain boundaries are quasi-matched with neighboring grains. The grains in the films form a regular array, and are distributed more uniformly than in conventional poly-crystalline semiconductor films. Because of the small-angle grain boundaries, a tetrahedral QSC semiconductor such as QSC Si films are expected to have extremely low energy barriers at the grain boundaries.
引用
收藏
页码:213 / 218
页数:6
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