Possibility of quasi-single-crystalline semiconductor films

被引:9
作者
Noguchi, T [1 ]
Usui, S [1 ]
Gosain, DP [1 ]
Ikeda, Y [1 ]
机构
[1] Sony Corp, Frontier Sci Labs, Hodogaya Ku, Yokohama, Kanagawa 2400036, Japan
来源
AMORPHOUS AND HETEROGENEOUS SILICON THIN FILMS: FUNDAMENTALS TO DEVICES-1999 | 1999年 / 557卷
关键词
D O I
10.1557/PROC-557-213
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The existence of a novel tetrahedral semiconductor Quasi-Single-Crystalline (QSC) phase is posited. In the QSC semiconductor phase, the films consist of grains with a diamond structure of tetrahedral elements, such as Si, Ge and C, and the grains have a preferred orientation, such as < 111 > or < 100 > normal to the film. The lattices perpendicular to the grain boundaries are quasi-matched with neighboring grains. The grains in the films form a regular array, and are distributed more uniformly than in conventional poly-crystalline semiconductor films. Because of the small-angle grain boundaries, a tetrahedral QSC semiconductor such as QSC Si films are expected to have extremely low energy barriers at the grain boundaries.
引用
收藏
页码:213 / 218
页数:6
相关论文
共 18 条
[11]   LATERAL GRAIN-GROWTH OF POLY-SI FILMS WITH A SPECIFIC ORIENTATION BY AN EXCIMER-LASER ANNEALING METHOD [J].
KURIYAMA, H ;
NOHDA, T ;
ISHIDA, S ;
KUWAHARA, T ;
NOGUCHI, S ;
KIYAMA, S ;
TSUDA, S ;
NAKANO, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12B) :6190-6195
[12]  
Morozumi S., 1983, SID 83, P156
[13]  
NOGUCHI T, 1985, P MAT RES SOC, V146, P35
[14]  
NOGUCHI T, 1992, P SON RES FOR, P200
[15]  
NOGUCHI T, 1998, Patent No. 10041234
[16]   SECONDARY GRAIN-GROWTH IN THIN-FILMS OF SEMICONDUCTORS - THEORETICAL ASPECTS [J].
THOMPSON, CV .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :763-772
[17]  
Usui S., 1989, Optoelectronics - Devices and Technologies, V4, P235
[18]   POLYSILICON THIN-FILM TRANSISTORS WITH CHANNEL LENGTH AND WIDTH COMPARABLE TO OR SMALLER THAN THE GRAIN-SIZE OF THE THIN-FILM [J].
YAMAUCHI, N ;
HAJJAR, JJJ ;
REIF, R .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) :55-60