Far-infrared spectrum analysis using plasmon modes in a quantum-well transistor

被引：32

作者：

Shaner, E. A.

Grine, A. D.

Wanke, M. C.

Lee, Mark

Reno, J. L.

Allen, S. J.

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

[2] Univ Calif Santa Barbara, Ctr THz Sci & Technol, Santa Barbara, CA 93106 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 17-20期

关键词：

far infrared; submillimeter-wave detectors; submillimeter-wave spectroscopy; terahertz;

D O I：

10.1109/LPT.2006.881670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Excitation of resonant plasmon modes by far-infrared (FIR) radiation in a quantum-well transistor is used to analyze the spectral content of FIR illumination at frequencies between 0.58 and 0.99 THz. A split grating gate design that allows localized pinch-off of the transistor channel greatly enhances FIR response and allows completely electrical tuning of the plasmon resonance, enabling broadband FIR spectrum analysis without moving parts. A voltage ramp applied to the gate can generate a spectrum at video rate. z.

引用

页码：1925 / 1927

页数：3

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