Terahertz plasma wave resonance of two-dimensional electrons in InGaP/InGaAs/GaAs high-electron-mobility transistors

被引：148

作者：

Otsuji, T ^{[1
]}

Hanabe, M ^{[1
]}

Ogawara, O ^{[1
]}

机构：

[1] Kyushu Inst Technol, Grad Sch Comp Sci & Syst Engn, Fukuoka 8208502, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 11期

关键词：

D O I：

10.1063/1.1792377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed the frequency dependence of the plasma resonant intensity in the terahertz range for a short gate-length InGaP/InGaAs/GaAs pseudomorphic high-electron-mobility transistor. The plasma resonance excitation was performed by means of interband photoexcitation using the difference-frequency component of a photomixed laser beam. Under sufficient density of two-dimensional (2D) conduction electrons (>10(12) cm(-2)) and a moderate modulation index (the ratio of the density of photoexcited electrons to the initial density of the 2D electrons) we clearly observed the plasma-resonant peaks at 1.9 and 5.8 THz corresponding to the fundamental and third-harmonic resonance at room temperature, which is in good agreement with theory. (C) 2004 American Institute of Physics.

引用

页码：2119 / 2121

页数：3

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