Low leakage current-stacked MgO/Bi1.5Zn1.0Nb1.5O7 gate insulator -: for low voltage ZnO thin film transistors

被引：25

作者：

Lim, Mi-Hwa ^{[1
]}

Kang, KyongTae

Kim, Ho-Gi

Kim, Il-Doo

Choi, YongWoo

Tuller, Harry L.

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Korea Adv Inst Sci & Technol, Optoelect Mat Res Ctr, Seoul 130650, South Korea

[3] LG Elect Inst Technol, Devices & Mat Lab, Seoul 137724, South Korea

[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2387985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors report on the role of MgO capping layers in notably reducing leakage currents and improving mobility in ZnO thin film transistors (TFTs) utilizing compatible high-k Bi1.5Zn1.0Nb1.5O7 (BZN) gate insulators. All room temperature processed ZnO based TFTs with stacked MgO/BZN gate insulator exhibited a much enhanced field effect mobility of 5.4 cm(2)/V s with excellent saturation characteristics as compared to that (mu(FE)=1.13 cm(2)/V s) of ZnO based TFTs with BZN gate insulator. This work demonstrates the suitability of MgO/BZN stacked gate insulators in the fabrication of low voltage ZnO based TFTs on plastic substrates. (c) 2006 American Institute of Physics.

引用

页数：3

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