Optical properties of ZnSe and Zn0.87Mn0.13Se epilayers determined by spectroscopic ellipsometry

被引：20

作者：

Kvietkova, J

Daniel, B

Hetterich, M

Schubert, M

Spemann, D

机构：

[1] Univ Karlsruhe, Inst Appl Phys, D-76131 Karlsruhe, Germany

[2] Univ Karlsruhe, CFN, D-76131 Karlsruhe, Germany

[3] Univ Leipzig, Inst Expt Phys 2, Fac Phys & Geosci, D-04103 Leipzig, Germany

来源：

THIN SOLID FILMS | 2004年 / 455卷

关键词：

ZnSe; ZnMnSe; dielectric properties; critical points;

D O I：

10.1016/j.tsf.2003.11.201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The semimagnetic ternary semiconductor material ZnMnSe is a suitable candidate for the use in optoelectronic devices either as a spin aligner or a waveguiding layer. In our work we are studying the optical properties of Zn-1 -xMnxSe layers grown on GaAs (001) substrates by molecular beam epitaxy. We present the complex dielectric function obtained by variable-angle spectroscopic ellipsometry in the photon energy range from 0.75 to 4.5 eV Between 0.75 and 3.3 eV the experimental data are fitted with a critical-point parametric model. The energies of E-0, E-0 +Delta(0), E-1 and E-1 + Delta(1) critical points are given for ZnSe and Zn0.87Mn0.13Se. (C) 2003 Elsevier B.V. All rights reserved.

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收藏

页码：228 / 230

页数：3

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