Paralinear oxidation of CVD SiC in water vapor

被引:459
作者
Opila, EJ [1 ]
Hann, RE [1 ]
机构
[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135
关键词
D O I
10.1111/j.1151-2916.1997.tb02810.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The oxidation kinetics of CVD SIC mere monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O-2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 degrees and 1400 degrees C. Paralinear weight change kinetics were observed as the water vapor oxidized the SIC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SIC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.
引用
收藏
页码:197 / 205
页数:9
相关论文
共 34 条
[1]   CHEMICAL NATURE OF SILICA CARRIED BY STEAM [J].
BRADY, EL .
JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (07) :706-710
[2]  
CAWLEY JD, 1985, 87127 NASA TM
[3]   VAPORIZATION OF SILICA IN STEAM ATMOSPHERE [J].
CHENG, MC ;
CUTLER, IB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1979, 62 (11-1) :593-596
[4]   OXIDATION OF CHEMICALLY-VAPOR-DEPOSITED SILICON-NITRIDE AND SINGLE-CRYSTAL SILICON [J].
CHOI, DJ ;
FISCHBACH, DB ;
SCOTT, WD .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1989, 72 (07) :1118-1123
[5]   OXIDATION-KINETICS OF SILICON-CARBIDE CRYSTALS AND CERAMICS .1. IN DRY OXYGEN [J].
COSTELLO, JA ;
TRESSLER, RE .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1986, 69 (09) :674-681
[6]   ANALYSIS OF CRITICAL-EXPONENT DATA USING EFRONS BOOTSTRAP TECHNIQUE [J].
CRARY, SB ;
FAHEY, DA .
PHYSICAL REVIEW B, 1987, 35 (04) :2102-2104
[7]   GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].
DEAL, BE ;
GROVE, AS .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&
[9]   COMPUTERS AND THE THEORY OF STATISTICS - THINKING THE UNTHINKABLE [J].
EFRON, B .
SIAM REVIEW, 1979, 21 (04) :460-480
[10]   LINEAR-REGRESSION IN ASTRONOMY .2. [J].
FEIGELSON, ED ;
BABU, GJ .
ASTROPHYSICAL JOURNAL, 1992, 397 (01) :55-67