Hydrogen sensitivity of ZnO p-n homojunctions

被引：62

作者：

Hazra, S. K. ^{[1
]}

Basu, S. ^{[1
]}

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2006年 / 117卷 / 01期

关键词：

p-ZnO; n-ZnO; homojunctions; hydrogen sensor;

D O I：

10.1016/j.snb.2005.11.018

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The sensor response of p-ZnO/n-ZnO structures was studied to 500 and 1000 ppm hydrogen at 300 and 400 degrees C. The p-n junctions behaved like tunnel diodes and were insensitive to hydrogen below 300 degrees C. The p-ZnO/n-ZnO junctions were fabricated by adopting techniques like d.c. sputtering (for n-ZnO) and modified CVD in a reverse spray mode (for p-ZnO), respectively. The sensitivity of the device increased and the response time decreased with increasing the operating temperature from 300 to 400 degrees C at each hydrogen concentration. A probable sensing mechanism has been discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：177 / 182

页数：6

共 24 条

[1] ZnO diode fabricated by excimer-laser doping [J].

Aoki, T ;

Hatanaka, Y ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258

[2] DEPOSITION AND CHARACTERIZATION OF ZINC-OXIDE THIN-FILMS FOR HYDROGEN SENSOR DEVICES [J].

DUTTA, A ;

CHAUDHURI, TK ;

BASU, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 14 (01) :31-35

[3] Pd/TiOx/Ti-Au (x < 2) metal-active insulator-metal (MIM) hydrogen gas sensor at elevated temperatures [J].

Hazra, SK ;

Basu, S .

SENSOR LETTERS, 2005, 3 (02) :179-182

[4] ZnO p-n junctions produced by a new route [J].

Hazra, SK ;

Basu, S .

SOLID-STATE ELECTRONICS, 2005, 49 (07) :1158-1162

[5] Stable p-ZnO thin films by oxygen control using reverse spray dynamics [J].

Hazra, SK ;

Basu, S .

SOLID STATE COMMUNICATIONS, 2005, 133 (04) :245-248

[6] Growth of titanium dioxide thin films via a metallurgical route and characterizations for chemical gas sensors [J].

Hazra, SK ;

Roy, S ;

Basu, S .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 110 (02) :195-201

[7] ADMITTANCE SPECTROSCOPY OF CU-DOPED ZNO CRYSTALS [J].

KANAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04) :703-707

[8] ADMITTANCE SPECTROSCOPY OF ZNO CRYSTALS CONTAINING AG [J].

KANAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9A) :2021-2022

[9] Sensing characteristics of ZnO-based NOx sensor [J].

Koshizaki, N ;

Oyama, T .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 66 (1-3) :119-121

[10] Highly sensitive semiconductor NOx gas sensor operating at room temperature [J].

Kunimoto, A ;

Abe, N ;

Uchida, H ;

Katsube, T .

SENSORS AND ACTUATORS B-CHEMICAL, 2000, 65 (1-3) :122-124

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