Selective growth of Co islands on ion beam induced nucleation centers in a native SiO2 film

被引：13

作者：

Cechal, Jan ^{[1
]}

Tomanec, Ondrej ^{[1
]}

Skoda, David ^{[1
]}

Konakova, Katerina ^{[1
]}

Hrncir, Tomas ^{[2
]}

Mach, Jindrich ^{[1
]}

Kolibal, Miroslav ^{[1
]}

Sikola, Tomas ^{[1
]}

机构：

[1] Brno Univ Technol, Fac Mech Engn, Inst Engn Phys, Brno 61669, Czech Republic

[2] Tescan SRO, Brno 62300, Czech Republic

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 08期

关键词：

cobalt; ion beam lithography; island structure; nanostructured materials; nucleation; CARBON NANOTUBE GROWTH; FIB NANOLITHOGRAPHY; GE NANOCRYSTALS; OXIDE THICKNESS; ULTRATHIN SIO2; SURFACES; SILICON; NANOFABRICATION; PARTICLES; DIFFUSION;

D O I：

10.1063/1.3116188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a straightforward method for fabrication of patterns of metallic nanostructures. The focused ion beam (FIB) lithography has been used to locally modify a native SiO2 layer on a silicon substrate. On the modified areas preferential nucleation of cobalt islands is observed. The cobalt islands formed upon deposition at 400-430 degrees C combined with an intermediate annealing at 550 degrees C have a uniform size distribution and their size can be controlled by the distance between the nucleation sites and the amount of deposited material. It is proposed that the island formation at patterned sites is due to reduced surface diffusion of Co atoms in the vicinity of FIB modified areas. The intermediate annealing improves the island morphology since the kinetic diffusion limits are lowered and system reconfigures toward its equilibrium state.

引用

页数：6

共 37 条

[1] Engineering atomic and molecular nanostructures at surfaces [J].