Direct-gap reduction and valence-band splitting of ordered indirect-gap AlInP2 studied by dark-field spectroscopy

被引:16
作者
Schubert, M [1 ]
Rheinlander, B [1 ]
Franke, E [1 ]
Pietzonka, I [1 ]
Skriniarova, J [1 ]
Gottschalch, V [1 ]
机构
[1] UNIV LEIPZIG,FA CHEM & MINERAL,D-04103 LEIPZIG,GERMANY
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 24期
关键词
D O I
10.1103/PhysRevB.54.17616
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The order-dependent valence-band splitting and direct-gap reduction in spontaneously ordered indirect-gap AlInP2 are determined by dark-field spectroscopy at room temperature. Similar to direct-gap GaInP2 both parameters depend on the degree of long-range CuPtB-type order. We obtain the direct gap for disordered and the order induced changes of the spin-orbit splitting and the crystal-field splitting normalized to the direct-gap change for perfectly ordered AlInP2.
引用
收藏
页码:17616 / 17619
页数:4
相关论文
共 15 条
[1]  
Azzam R., 1977, ELLIPSOMETRY POLARIZ
[2]   BAND-GAP REDUCTION AND VALENCE-BAND SPLITTING OF ORDERED GAINP2 [J].
ERNST, P ;
GENG, C ;
SCHOLZ, F ;
SCHWEIZER, H ;
ZHANG, Y ;
MASCARENHAS, A .
APPLIED PHYSICS LETTERS, 1995, 67 (16) :2347-2349
[3]   OBSERVATION OF STRONG ORDERING IN GAXIN1-XP ALLOY SEMICONDUCTORS [J].
GOMYO, A ;
SUZUKI, T ;
IIJIMA, S .
PHYSICAL REVIEW LETTERS, 1988, 60 (25) :2645-2648
[4]   VALENCE-BAND SPLITTING IN ORDERED GA0.5IN0.5P STUDIED BY TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE POLARIZATION [J].
KANATA, T ;
NISHIMOTO, M ;
NAKAYAMA, H ;
NISHINO, T .
PHYSICAL REVIEW B, 1992, 45 (12) :6637-6642
[5]   REFRACTIVE-INDEXES MEASUREMENT OF (GAINP)M/(AIINP)N QUASI-QUATERNARIES AND GAINP/ALINP MULTIPLE-QUANTUM WELLS [J].
KANEKO, Y ;
KISHINO, K .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1809-1818
[6]   ATOMIC ARRANGEMENT OF SPONTANEOUSLY ORDERED AL0.5IN0.5P/GAAS [J].
KONDOW, M ;
KAKIBAYASHI, H ;
MINAGAWA, S .
PHYSICAL REVIEW B, 1989, 40 (02) :1159-1163
[7]   POLARIZED BAND-EDGE PHOTOLUMINESCENCE AND ORDERING IN GA0.52IN0.48P [J].
MASCARENHAS, A ;
KURTZ, S ;
KIBBLER, A ;
OLSON, JM .
PHYSICAL REVIEW LETTERS, 1989, 63 (19) :2108-2111
[8]   REFRACTIVE-INDEX OF (ALXGA1-X)(0.5)IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].
MOSER, M ;
WINTERHOFF, R ;
GENG, C ;
QUEISSER, I ;
SCHOLZ, F ;
DORNEN, A .
APPLIED PHYSICS LETTERS, 1994, 64 (02) :235-237
[9]   CONDUCTION BANDS IN INL-XALXP [J].
ONTON, A ;
CHICOTKA, RJ .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (10) :4205-&
[10]   Polarization-dependent optical parameters of arbitrarily anisotropic homogeneous layered systems [J].
Schubert, M .
PHYSICAL REVIEW B, 1996, 53 (08) :4265-4274