Effect of UV/ozone treatment on hysteresis of pentacene thin-film transistor with polymer gate dielectric

被引：38

作者：

Koo, Jae Bon ^{[1
]}

Kang, Seong Yeol ^{[1
]}

You, In Kyu ^{[1
]}

Suh, Kyung Soo ^{[1
]}

机构：

[1] Elect & Telecommun Res Inst, New Devices & Mat Res Dept, Convergence Components & Mat Res Lab, Taejon 305700, South Korea

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 06期

关键词：

Organic thin-film transistor (OTFT); Pentacene; Hysteresis; Surface treatment; UV/ozone; INTERFACE; VOLTAGE; STATES;

D O I：

10.1016/j.sse.2009.04.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Pentacene organic thin-film transistors (OTFTs) having acrylic polymer gate dielectric were fabricated with the change of UV/ozone treatment on the surface of gate dielectric. As UV/ozone exposure time increased, threshold voltage was shifted towards positive values from -0.7 V to 6.2 V and saturation mobility was dramatically increased from 0.07 cm(2)/Vs to 2.66 CM2/Vs while the amount of hysteresis was enlarged. The increase of hysteresis and the non-saturation behavior of output characteristics were attributed to the generation of hydroxyl groups through polymer dissociation during UV/ozone treatment because the hydroxyl groups making the surface of polymer gate dielectric more polar played as electron traps. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：621 / 625

页数：5

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