Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors

被引：52

作者：

Guo, Dong ^{[1
]}

Entani, Shiro ^{[1
]}

Ikeda, Susumu ^{[1
]}

Saiki, Koichiro ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Complex Sci & Engn, Kashiwa, Chiba 2278561, Japan

来源：

CHEMICAL PHYSICS LETTERS | 2006年 / 429卷 / 1-3期

关键词：

D O I：

10.1016/j.cplett.2006.08.009

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The effect of UV/ozone treatment of the SiO2 dielectric layer on the film morphology and the electrical performance of the pentacene thin film transistors (TFTs) was investigated. Decreased threshold voltage and improved mobility were obtained after UV/ozone treatment. The effect of UV/ozone treatment of the substrate in modifying the film growth was distinguished from its effect in modifying the An electrode by using a series of samples with different architectures. Electron spectroscopic measurement and film morphology observation indicated that the improved TFT performance was achieved mainly by the reduced contamination at the pentacene/SiO2 interface and the increased grain size. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：124 / 128

页数：5

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