Ultrafast trapping times in ion implanted InP

被引：10

作者：

Carmody, C ^{[1
]}

Boudinov, H

Tan, HH

Jagadish, C

Lederer, MJ

Kolev, V

Luther-Davies, B

Dao, LV

Gal, M

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia

[3] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

[4] UFRGS, Inst Fis, Porto Alegre, RS, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 05期

关键词：

D O I：

10.1063/1.1493651

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1x10(16) cm(-2) and p-type InP was implanted with doses between 1x10(12) and 1x10(16) cm(-2). Subsequently, rapid thermal annealing at temperatures between 400 and 700 degreesC was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity. (C) 2002 American Institute of Physics.

引用

页码：2420 / 2423

页数：4

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