High-power AlGaInN laser diodes with high kink level and low relative intensity noise

被引：36

作者：

Tojyo, T ^{[1
]}

Uchida, S ^{[1
]}

Mizuno, T ^{[1
]}

Asano, T ^{[1
]}

Takeya, M ^{[1
]}

Hino, T ^{[1
]}

Kijima, S ^{[1
]}

Goto, S ^{[1
]}

Yabuki, Y ^{[1
]}

Ikeda, M ^{[1
]}

机构：

[1] Sony Shiroishi Semicond Inc, Dev Ctr, Shiroishi, Miyagi 9890734, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 3B期

关键词：

laser diodes; GaN; GaInN; MQW; ridge; high power; kink; relative intensity noise; lifetime;

D O I：

10.1143/JJAP.41.1829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-power AlGaInN laser diodes (LDs) with both high kink level and low relative intensity noise (RIN) are successfully fabricated. A kink level of higher than 100 mW is obtained by using a new ridge structure and by narrowing the ridge width down to 1.5 mum. This structure consists of a thin Si on SiO2 multiple buried layers instead of the conventional thick SiO2 buried layer. The low RIN of these devices is obtained by decreasing the threshold cur-rent: under optical feedback with high-frequency modulation, the RIN values are as low as - 125 dB/Hz. As the RIN of these devices exhibits a tendency to deteriorate with increasing operating current, the lifetime criterion was redefined as the point at which the operating current has increased by 20%. Even under this stricter lifetime criterion. the estimated lifetime of these LDs exceeds 15,000 h under 30 mW cw operation at 60degreesC.

引用

页码：1829 / 1833

页数：5

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