Ion implantation of Si, Mg and C into Al0.12Ga0.88N

被引：35

作者：

Polyakov, AY

Shin, M

Skowronski, M

Wilson, RG

Greve, DW

Pearton, SJ

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

[2] CARNEGIE MELLON UNIV,DEPT ELECT & COMP ENGN,PITTSBURGH,PA 15213

[3] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 05期

基金：

美国安德鲁·梅隆基金会; 美国国家科学基金会;

关键词：

D O I：

10.1016/S0038-1101(96)00182-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si, Mg and C were implanted in undoped semi-insulating layers of AlxGa1-xN with x = 0.12. Activation of implanted Si occurred after annealing at 1140 degrees C in ammonia with subsequent anneal at 800 degrees C in nitrogen. For a dose of 5 x 10(14) cm(-2) an average electron concentration of 1.2 x 10(18) cm(-3) was achieved. Implantation and annealing of Mg and C resulted in very highly resistive AlGaN layers for all annealing conditions, with no evidence of shallow acceptor activation. Proton implantation into initially conducting AlGaN produced highly resistive material suitable for electrical device isolation. (C) 1997 Elsevier Science Ltd.

引用

页码：703 / 706

页数：4

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