High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

被引：57

作者：

Yang, X ^{[1
]}

Heroux, JB ^{[1
]}

Jurkovic, MJ ^{[1
]}

Wang, WI ^{[1
]}

机构：

[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 07期

关键词：

D O I：

10.1063/1.125587

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1.3 mu m InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm(2) was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T-0) of 92 and 54 K for operating temperatures below and above 75 degrees C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/degrees C. (C) 2000 American Institute of Physics. [S0003-6951(00)00107-8].

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页码：795 / 797

页数：3

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