Enhanced light-extraction in GaInN near-ultraviolet light-emitting diode with Al-based omnidirectional reflector having NiZn/Ag microcontacts

被引：31

作者：

Kim, Jong Kyu ^{[1
]}

Xi, J. -Q.

Luo, Hong

Schubert, E. Fred

Cho, Jaehee

Sone, Cheolsoo

Park, Yongjo

机构：

[1] Rensselaer Polytech Inst, Future Chips Constellat, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Rensselaer Polytech Inst, Dept Phys Appl Phys & Astron, Troy, NY 12180 USA

[3] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 14期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2360217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Enhancement of light extraction in a GaInN near-ultraviolet light-emitting diode (LED) employing an Al-based omnidirectional reflector (ODR) consisting of GaN, a SiO2 low-refractive-index layer perforated by an array of NiZn/Ag microcontacts, and an Al layer is presented. A theoretical calculation reveals that a SiO2/Al ODR has much higher reflectivity than both a SiO2/Ag ODR and a Ag reflector at a wavelength of 400 nm. It is experimentally shown that GaInN near-ultraviolet LEDs with GaN/SiO2/Al ODR have 16% and 38% higher light output than LEDs with SiO2/Ag ODR and Ag reflector, respectively. The higher light output is attributed to enhanced reflectivity of the Al-based ODR in the near-ultraviolet wavelength range. (c) 2006 American Institute of Physics.

引用

页数：3

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