Photochemical construction of photovoltaic device composed of p-copper(I) oxide and n-zinc oxide

被引：45

作者：

Izaki, Masanobu ^{[1
]}

Mizuno, Ko-taro

Shinagawa, Tsutomu

Inaba, Minoru

Tasaka, Akimasa

机构：

[1] Osaka Municipal Tech Res Inst, Dept Elect Mat, Joto Ku, Osaka 5368553, Japan

[2] Doshisha Univ, Grad Sch Engn, Kyoto 6100321, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2006年 / 153卷 / 09期

关键词：

D O I：

10.1149/1.2218791

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The photochemical deposition of a p-type semiconducting copper(I) oxide (Cu2O) layer by irradiating visible light in an aqueous solution containing a lactic acid and copper sulfate hydrate is presented. The p-Cu2O layer was photochemically stacked on a chemically deposited n-type semiconducting ZnO layer/quartz glass substrate, and the photovoltaic device was constructed by forming a Au top electrode using a sputtering technique. The Au/p-Cu2O/n-ZnO photovoltaic device showed an electrical rectification and the performance of 46 mV in open-circuit voltage (V-oc) and 75 mu A cm(-2) in short-circuit current density (J(sc)) under an Air Mass 1.5 illumination. (c) 2006 The Electrochemical Society.

引用

页码：C668 / C672

页数：5

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