Radio-frequency plasma production using a ladder-shaped antenna

被引:12
作者
Kawai, Y
Yoshioka, M
Yamane, T
Takeuchi, Y [1 ]
Murata, M
机构
[1] Mitsubishi Heavy Ind Ltd, Nagasaki Res & Dev Ctr, Nagasaki 8510392, Japan
[2] Kyushu Univ, Sch Engn Sci, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580, Japan
关键词
ladder-shaped antenna; Langmuir probe; plasma CVD; plasma parameter; VHF plasma;
D O I
10.1016/S0257-8972(99)00295-9
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A VHF plasma was produced with a ladder-shaped antenna whose driving frequency ranges up to 200 MHz and the plasma parameters were measured with a movable Langmuir probe. A very uniform plasma was achieved over 300 mm x 300 mm with a driving frequency of 80 MHz. When the driving frequency was increased, the plasma density increased, amounting to 1.6 x 10(10) cm(-3) at 200 MHz near the substrate, and the electron temperature decreased. (C) 1999 Published by Elsevier Science S.A. All rights reserved.
引用
收藏
页码:662 / 665
页数:4
相关论文
共 9 条
[1]  
[Anonymous], MAT RES SOC S P
[2]   INFLUENCE OF PLASMA EXCITATION-FREQUENCY FOR ALPHA-SI-H THIN-FILM DEPOSITION [J].
CURTINS, H ;
WYRSCH, N ;
FAVRE, M ;
SHAH, AV .
PLASMA CHEMISTRY AND PLASMA PROCESSING, 1987, 7 (03) :267-273
[3]   FREQUENCY-EFFECTS IN SILANE PLASMAS FOR PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].
HOWLING, AA ;
DORIER, JL ;
HOLLENSTEIN, C ;
KROLL, U ;
FINGER, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :1080-1085
[4]   Production of inductively coupled RF plasma using a ladder-shaped antenna [J].
Murata, M ;
Mashima, H ;
Yoshioka, M ;
Nishida, S ;
Morita, S ;
Kawai, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (7B) :4563-4567
[5]   Inductively coupled radio frequency plasma chemical vapor deposition using a ladder-shaped antenna [J].
Murata, M ;
Takeuchi, Y ;
Sasagawa, E ;
Hamamoto, K .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (04) :1542-1545
[6]   DIAGNOSTIC STUDY OF VHF PLASMA AND DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS [J].
ODA, S ;
NODA, J ;
MATSUMURA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10) :1889-1895
[7]   A voltage uniformity study in large-area reactors for RF plasma deposition [J].
Sansonnens, L ;
Pletzer, A ;
Magni, D ;
Howling, AA ;
Hollenstein, C ;
Schmitt, JPM .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1997, 6 (02) :170-178
[8]   Sheath impedance effects in very high frequency plasma experiments [J].
Schwarzenbach, W ;
Howling, AA ;
Fivaz, M ;
Brunner, S ;
Hollenstein, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (01) :132-138
[9]  
YAMAKOSHI H, 1998, P 15 S PLASM PROC JA, P65