Device modeling of ferroelectric memory field-effect transistor (FeMFET)

被引：148

作者：

Lue, HT ^{[1
]}

Wu, CJ

Tseng, TY

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[3] Natl Huwei Inst Technol, Dept Electroopt Engn, Huwei, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 10期

关键词：

ferroelectric memory field-effect transistors; (FeMFET); ferroelectric; ferroelectric random access memory (FeRAM); memory; metal-ferroelectric-insulator-semiconductor; (MFIS); metal-ferroelectric-metal-insulator-semiconductor; (MFMIS); modeling; one transistor (1T); transistor;

D O I：

10.1109/TED.2002.803626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered. A new analytic expression for the relation of polarization versus electric field (P-E) is proposed to describe the nonsaturated hysteresis loop of the ferroelectric material. In order to provide a more accurate simulation, we incorporate the combined effects of the nonsaturated polarization of ferroelectric layers and the nonuniform distributions of electric field and charge along the channel. We also discuss the possible nonideal effects due to the fixed charges, charge injection, and short channel. The present theoretical work provides some new design rules for improving the performance of FeMFETs.

引用

页码：1790 / 1798

页数：9

共 12 条

[1] The impact of high-κ gate dielectrics and metal gate electrodes on sub-100 nm MOSFET's [J].