Development and application of an abrasive-free polishing solution for copper

被引：18

作者：

Hanazono, M ^{[1
]}

Amanokura, J ^{[1
]}

Kamigata, Y ^{[1
]}

机构：

[1] Hitachi Chem Co Ltd, Chem Mech Planarizat Mat Project, Semicond Mat Dev Div, Tokyo, Japan

来源：

MRS BULLETIN | 2002年 / 27卷 / 10期

关键词：

abrasive-free polishing; chemical-mechanical planarization; chemical-mechanical polishing; CMP; chemical reactivity; electronic materials; semiconductor materials;

D O I：

10.1557/mrs2002.248

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An abrasive-free polishing (AFP) solution for chemical-mechanical planarization (CMP) of copper films on semiconductor wafers has been developed to overcome such disadvantages of conventional CMP as dishing, erosion, Cu and oxide loss, and microscratching. Electrochemical methods are an effective way of understanding the role of each chemical component in the AFP, solution in order to optimize its performance. Analysis of the reaction layer of Cu elucidates the reasons for the excellent results that have been obtained. By applying the AFP solution for Cu CMP in combination with a slurry for CMP of the metal barrier layer, seven-level multilayer Cu interconnections can be successfully fabricated.

引用

页码：772 / 775

页数：4

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