Characterization of Al2O3 Thin Films Fabricated at Low Temperature via Atomic Layer Deposition on PEN Substrates

被引：11

作者：

Choi, Kyung-Hyun ^{[1
]}

Ali, Kamran ^{[1
]}

Kim, Chang Young ^{[2
,3
]}

Muhammad, Nauman Malik ^{[4
]}

机构：

[1] Jeju Natl Univ, Dept Mechatron Engn, Cheju 690756, South Korea

[2] Jeju Natl Univ, Res Inst Basic Sci, Cheju 690756, South Korea

[3] Jeju Natl Univ, Dept Phys, Cheju 690756, South Korea

[4] Yildirim Beyazit Univ, Dept Mech Engn, Ankara, Turkey

来源：

CHEMICAL VAPOR DEPOSITION | 2014年 / 20卷 / 4-6期

关键词：

Al2O3; ALD; Film properties; Low temperature; PEN; XPS; ALUMINUM; POLYMER; SILICON; ATOMIZATION; KINETICS; BEHAVIOR; GROWTH; CELLS; TIO2; H2O;

D O I：

10.1002/cvde.201307082

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Good quality Al2O3 thin films are deposited on polyethylene naphthalate (PEN) substrates through atomic layer deposition (ALD) at temperatures as low as 35 degrees C. Trimethylaluminum [TMA, Al(CH3)(3)] and water are used as precursors in the present study. Growth rates of 1.14 angstrom per cycle are observed at 35 degrees C, while the average arithmetic roughness (Ra) of the film is 0.86 nm. X-ray photoelectron spectroscopy (XPS) analysis confirms the high purity of the grown films with no carbon contamination. Good insulating properties are observed for the films and optical transmittance of more than 90% is recorded in the visible region.

引用

页码：118 / 124

页数：7

共 60 条

[1] Fabrication of ZrO2 layer through electrohydrodynamic atomization for the printed resistive switch (memristor) [J].

Awais, Muhammad Naeem ;

Muhammad, Nauman Malik ;

Navaneethan, Duraisamy ;

Kim, Hyung Chan ;

Jo, Jeongdai ;

Choi, Kyung Hyun .

MICROELECTRONIC ENGINEERING, 2013, 103 :167-172

[2] Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia [J].

Becker, JS ;

Gordon, RG .

APPLIED PHYSICS LETTERS, 2003, 82 (14) :2239-2241

[3] H2O Vapor Transmission Rate through Polyethylene Naphtha late Polymer Using the Electrical Ca Test [J].

Bertrand, J. A. ;

Higgs, D. J. ;

Young, M. J. ;

George, S. M. .

JOURNAL OF PHYSICAL CHEMISTRY A, 2013, 117 (46) :12026-12034

[4] Ca test of Al2O3 gas diffusion barriers grown by atomic layer deposition on polymers [J].

Carcia, P. F. ;

McLean, R. S. ;

Reilly, M. H. ;

Groner, M. D. ;

George, S. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (03)

[5] Permeation measurements and modeling of highly defective Al2O3 thin films grown by atomic layer deposition on polymers [J].

Carcia, P. F. ;

McLean, R. S. ;

Reilly, M. H. .

APPLIED PHYSICS LETTERS, 2010, 97 (22)

[6] Gas diffusion ultrabarriers on polymer substrates using Al2O3 atomic layer deposition and SiN plasma-enhanced chemical vapor deposition [J].

Carcia, P. F. ;

McLean, R. S. ;

Groner, M. D. ;

Dameron, A. A. ;

George, S. M. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (02)

[7] Thin-film encapsulation of polymer-based bulk-heterojunction photovoltaic cells by atomic layer deposition [J].

Chang, Chih-Yu ;

Chou, Chun-Ting ;

Lee, Yun-Jun ;

Chen, Miin-Jang ;

Tsai, Feng-Yu .

ORGANIC ELECTRONICS, 2009, 10 (07) :1300-1306

[8] Versatile resistive switching (memristive) behavior in an ITO/ZRO2/AG sandwich fabricated using electrohydrodynamic printing [J].

Choi, Kyung Hyun ;

Awais, Muhammad Naeem .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61 (01) :119-123

[9] Investigation of electrostatic atomization of a conjugated polymer (poly[2-methoxy-5-(2′-ethylhexyloxy)-(p-phenylenevinylene)]) and its film characterization for organic diode applications [J].

Choi, Kyung-Hyun ;

Mustafa, Maria ;

Ko, Jeong-Beom ;

Doh, Yang-Hoi .

THIN SOLID FILMS, 2012, 525 :40-44

[10] Protection of polymer from atomic-oxygen erosion using Al2O3 atomic layer deposition coatings [J].

Cooper, Russell ;

Upadhyaya, Hari P. ;

Minton, Timothy K. ;

Berman, Michael R. ;

Du, Xiaohua ;

George, Steven M. .

THIN SOLID FILMS, 2008, 516 (12) :4036-4039

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