Potential profiling of the nanometer-scale charge-depletion layer in n-ZnO/p-NiO junction using photoemission spectroscopy

被引：28

作者：

Ishida, Yukiaki ^{[1
]}

Fujimori, Atsushi

Ohta, Hiromichi

Hirano, Masahiro

Hosono, Hideo

机构：

[1] Univ Tokyo, Dept Phys, Kashiwa, Chiba 2778561, Japan

[2] Univ Tokyo, Dept Complex Sci, Kashiwa, Chiba 2778561, Japan

[3] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[4] Tokyo Inst Technol, ERATO, SORST, JST,Frontier Collaborat Res Ctr,Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期

关键词：

D O I：

10.1063/1.2358858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have performed a depth-profile analysis of an all-oxide p-n junction diode n-ZnO/p-NiO using photoemission spectroscopy combined with Ar-ion sputtering. Systematic core-level shifts were observed during the gradual removal of the ZnO overlayer, and were interpreted using a model based on charge conservation. Spatial profile of the potential around the interface was deduced, including the charge-depletion width of 2.3 nm extending on the ZnO side and the built-in potential of 0.54 eV. (c) 2006 American Institute of Physics.

引用

页数：3

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