Peltier effect in a co-evaporated Sb2Te3(P)-Bi2Te3(N) thin film thermocouple

被引：120

作者：

Zou, HL ^{[1
]}

Rowe, DM ^{[1
]}

Williams, SGK ^{[1
]}

机构：

[1] Cardiff Univ, Sch Engn, Div Elect Engn, Cardiff CF24 3TF, S Glam, Wales

来源：

THIN SOLID FILMS | 2002年 / 408卷 / 1-2期

关键词：

evaporation; bismuth; tellurium; X-ray diffraction;

D O I：

10.1016/S0040-6090(02)00077-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A thin film Sb2Te3-Bi2Te3 based thermocouple was fabricated by co-evaporation. The conditions for deposition have been investigated as a function of substrate temperature (T-s) and flux ratio [F-r=F(Te)/F(Sb,Bi)] and optimised to achieve a high thermoelectric power factor. It has been observed that the Seebeck coefficient and electrical conductivity of p-type Sb2Te3 thin films (alpha(p), rho(p)) and n-type Bi2Te3 thin films (alpha(n), rho(n)) deposited by co-evaporation were found to be approximately 160 muV/K, 3.12 X 10(-3) Ohmcm and -200 muV/K, 1.29 X 10(-3) Ohmcm, respectively. From optimal deposition parameters, a thin film thermocouple was fabricated and operated in Peltier mode. The observed maximum value for temperature difference between hot and cold end is approximately 15.5 K for a current of 55 mA. The figure of merit and coefficient of performance of the thermocouple are estimated. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：270 / 274

页数：5

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