The atomic displacements on surface generated by low-energy projectile

被引:15
作者
Ma, ZQ [1 ]
Kido, Y
机构
[1] Xinjiang Univ, Dept Phys, Funct Mat Lab, Urumqi 830046, Peoples R China
[2] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[3] Ritsumeikan Univ, Dept Phys, Kusatsu, Shiga 52577, Japan
关键词
epitaxy; ion bombardment; surface defects; atomic displacement;
D O I
10.1016/S0040-6090(99)00742-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simplified analytical model for ion-solid interactions. appropriate for low-energy beam depositions, is presented to determine the analytic solution of the deposited energy in the solid. The deposited energy in the surface and the energy deposited in the underlying bulk, correlative to the atomic displacement leaving the lattice damage, are dependent on the mass and incident energy of projectiles as well as the sharp displacement threshold energy. The determination of deposited energy of ion in subsurface yields a ceiling for the beam energy above which more defects are generated in the bulk resulting in defective films. The accuracy of the angular average over the scattering cross section is evaluated from comparison with experimental results. The analytic solution is applied to Ar+ and N+ projectiles in diamond, graphite and SiC materials, respectively. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:288 / 292
页数:5
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