A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions

被引：13

作者：

Zhao, R

Lau, WS

Chong, TC

Li, MF

机构：

[1] Center for Optoelectronics, Department of Electrical Engineering, National University of Singapore, Singapore 119260

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1996年 / 35卷 / 1A期

关键词：

wet selective etching; GaAs; LT GaAs; AlAs;

D O I：

10.1143/JJAP.35.22

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work we report the selective etching characteristics of GaAs grown by molecular beam epitaxy oi er AlAs etch-stop layer in four etching solutions. We show that these solutions, which are commonly used for selective etching of GaAs grown at the conventional temperature of 600 degrees C (HT GaAs) are also effective for low-temperature GaAs grown at 230 degrees C with annealing at 600 degrees C (a-LT GaAs) and low-temperature-grown GaAs without annealing (LT GaAs). In these solutions, the etching rates of LT GaAs and a-LT GaAs are lower than that of HT GaAs and hence the selectivities of LT GaAs and a-LT GaAs over AlAs are lower than that of HT GaAs over AlAs. The succinic acid/H2O2 solution with pH = 4.2 was found to be the best selective etchant. Furthermore, we observed, for the first time, that the AlAs etch-stop layer tended to fail at the periphery of the etched windows, resulting in void formation if the etching was excessive. It took a longer time for this to happen in the succinic acid/H2O2 solution than in other solutions investigated.

引用

页码：22 / 25

页数：4

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