LOW THRESHOLD INGAAS STRAINED QUANTUM-WELL LASER WITH LATERAL NPN CURRENT BLOCKING STRUCTURE GROWN BY MOLECULAR-BEAM EPITAXY

被引：7

作者：

TAKAMORI, T

WATANABE, K

KAMIJOH, T

机构：

[1] Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd., Hachioji, Tokyo 193

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 15期

关键词：

SEMICONDUCTOR LASERS; LASERS;

D O I：

10.1049/el:19920902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A sophisticated current confinement structure using the amphoteric nature of MBE grown Si-doped GaAs and AlGaAs is demonstrated for an index-guided InGaAs strained quantum well laser. Lateral and vertical npn current blocking layers were formed for the first time by a selfaligned process. Devices showed threshold current of 10 mA and total slope efficiency of 0.56 under room temperature CW operation.

引用

页码：1419 / 1420

页数：2

共 8 条

[1] HIGH-POWER 980 NM RIDGE WAVE-GUIDE LASERS WITH ETCH-STOP LAYER [J].