Effect of substrate temperature on the deposition of C-N films by pulsed high-temperature C-H-N Plasma CVD

被引：10

作者：

Jiang, YB ^{[1
]}

Zhang, HX ^{[1
]}

Cheng, DJ ^{[1
]}

Yang, SZ ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Plasma Phys & Applicat Div, Beijing 100080, Peoples R China

来源：

THIN SOLID FILMS | 2000年 / 360卷 / 1-2期

关键词：

C-N films; substrate temperature; pulsed high-temperature plasma CVD;

D O I：

10.1016/S0040-6090(99)00572-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Rather than using conventional low-temperature plasma, the pulsed high-temperature plasma was used to synthesize C-N films. CH4 + N-2 mixture was used as the gas source. The effect of substrate temperature on the deposition was studied. It was found that with the increase of substrate temperature, the deposition rate dropped drastically, the content of H in the films decreased and the hardness of the films was improved; The N/C ratio, however, changed only by a small degree, suggesting that the C and N has been well combined by using high-temperature plasma. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：52 / 55

页数：4

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