Diamond nucleation on nonscratched Si substrate pretreated by pulsed high-temperature and high-density CH4-plasma beam

被引:2
作者
Jiang, YB
Zhang, HX [1 ]
Liu, CZ
Liu, B
Lin, ZD
Wu, C
Yang, SZ
机构
[1] Chinese Acad Sci, State Key Lab Surface Phys, Beijing 100080, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Plasma Res Ctr, Beijing 100080, Peoples R China
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1998年 / 16卷 / 05期
关键词
D O I
10.1116/1.581472
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
While great interest has been focused on low-temperature plasma chemical vapor deposition, the pulsed high-temperature and high-density plasma beam was utilized to enhance diamond nucleation on Si substrate without damaging the smoothness of Si surface, and a nucleation density up to 10(9) cm(-2) was obtained. Scanning electron microscopy, atomic force microscopy, x-ray photoelectron spectroscopy, and transmission electron microscopy results indicated that after pretreated by this high power CH4 plasma,an amorphous modified layer rich in sp(3)-hybridized carbon was formed on the Si surface. This layer was believed to provide large amounts of nucleation sites for diamond. (C) 1998 American Vacuum Society. [S0734-2101(98)01905-8].
引用
收藏
页码:3138 / 3141
页数:4
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