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Hydrogen sensing characteristics of a Pt-oxide-Al0.3Ga0.7As MOS Schottky diode

被引：37
作者：
Cheng, CC
Tsai, YY
Lin, KW
Chen, HI
Lu, CT
Liu, WC
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Chien Kuo Inst Technol, Dept Elect Engn, Changhua, Taiwan
[3] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2004年 / 99卷 / 2-3期
关键词：
hydrogen sensors; AlGaAs schottky diode; thermodynamic; response time;
D O I：
10.1016/j.snb.2003.12.011
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
An interesting hydrogen sensor based on a Pt-oxide-Al0.3Ga0.7As MOS structure is fabricated and studied. The transient response and hydrogen detection sensitivity of the studied device under different hydrogen concentrations, temperature and applied voltages are measured. In addition, the kinetic and thermodynamic properties of hydrogen adsorption are studied and discussed. Experimentally, the studied device shows significant advantages of extremely low hydrogen concentration (15 ppm H-2/air) detection capability, high hydrogen detection sensitivity (20 in 9090 ppm H-2/air gas), short response time, wide temperature operating regime and good hydrogen detection ability under bi-directional applied bias. Based on these good properties, therefore, the studied device provides a promise for high-performance solid-state hydrogen sensor applications. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：425 / 430
页数：6
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