Optical receivers for optoelectronic VLSI

被引:41
作者
Woodward, TK
Krishnamoorthy, AV
Lentine, AL
Chirovsky, LMF
机构
[1] AT&T BELL LABS, LUCENT TECHNOL, NAPERVILLE, IL 60566 USA
[2] AT&T BELL LABS, LUCENT TECHNOL, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1109/2944.541879
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We describe Our work on the design and testing of optical receivers for use in optoelectronic VLSI, The focal nature of the optoelectronic VLSI system permits novel receiver designs, incorporating multiple optical beams and/or synchronous operation, while the requirement of realizing large numbers of cr a receivers on a single chip severely constrains al ea and power consumption. We describe four different receiver designs, and their different operating modes. Results include 1-Gb/s high-impedance, two-beam diode-clamped PET-SEED receivers, single and dual-beam transimpedance receivers realized with a hybrid attachment of multiple-quantum well devices to 0.8-mu m linewidth CMOS operating to 1 Gb/s, and synchronous sense-amplifier-based optical receivers with low (similar to 1 mW) power consumption. Finally, we introduce a measure of receiver performance that includes area and power consumption.
引用
收藏
页码:106 / 116
页数:11
相关论文
共 28 条
[1]   MONOLITHIC OPTOELECTRONIC TRANSISTOR - A NEW SMART-PIXEL DEVICE [J].
AULL, BF ;
NICHOLS, KB ;
MAKI, PA ;
PALMATEER, SC ;
BROWN, ER ;
LIND, TA .
APPLIED PHYSICS LETTERS, 1993, 63 (11) :1555-1557
[2]   A HIGH-SPEED SENSING SCHEME FOR 1T DYNAMIC RAMS UTILIZING THE CLAMPED BIT-LINE SENSE AMPLIFIER [J].
BLALOCK, TN ;
JAEGER, RC .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (04) :618-625
[3]   VERTICAL ELECTRICAL INTERCONNECTION OF COMPOUND SEMICONDUCTOR THIN-FILM DEVICES TO UNDERLYING SILICON CIRCUITRY [J].
CAMPERIGINESTET, C ;
KIM, YW ;
JOKERST, NM ;
ALLEN, MG ;
BROOKE, MA .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (09) :1003-1006
[4]   BATCH FABRICATION AND STRUCTURE OF INTEGRATED GAAS-ALXGA1-XAS FIELD-EFFECT TRANSISTOR SELF-ELECTRO-OPTIC EFFECT DEVICES (FET SEEDS) [J].
DASARO, LA ;
CHIROVSKY, LMF ;
LASKOWSKI, EJ ;
PEI, SS ;
LEIBENGUTH, RE ;
WOODWARD, TK ;
FOCHT, M ;
LENTINE, AL ;
ASOM, MT ;
GUTH, G ;
KOPF, RF ;
KUO, JM ;
PEARTON, SJ ;
PRZYBYLEK, GJ ;
REN, F ;
SMITH, LE .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (10) :528-531
[5]  
GOODMANJW, 1984, P IEEE, V72, P159
[6]  
GOODWILL DJ, 1994, IEEE LEOS TOP M SMAR
[7]   GAAS MQW MODULATORS INTEGRATED WITH SILICON CMOS [J].
GOOSSEN, KW ;
WALKER, JA ;
DASARO, LA ;
HUI, SP ;
TSENG, B ;
LEIBENGUTH, R ;
KOSSIVES, D ;
BACON, DD ;
DAHRINGER, D ;
CHIROVSKY, LMF ;
LENTINE, AL ;
MILLER, DAB .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (04) :360-362
[8]  
GOOSSEN KW, 1993, OSA PROC, V16, P94
[9]   INTEGRATION OF LEDS AND GAAS CIRCUITS BY MBE REGROWTH [J].
GROT, AC ;
PSALTIS, D ;
SHENOY, KV ;
FONSTAD, CG .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (07) :819-823
[10]  
HEATLEY DJT, 1994, DESIGN ANALOG DIGITA, P125