Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

被引：35

作者：

Luxmi ^{[1
]}

Nie, Shu ^{[1
]}

Fisher, P. J. ^{[1
]}

Feenstra, R. M. ^{[1
]}

Gu, Gong ^{[2
]}

Sun, Yugang ^{[3
]}

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Sarnoff Corp, Princeton, NJ 08543 USA

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2009年 / 38卷 / 06期

关键词：

Graphene; silicon carbide; semiconductor; field-effect transistor; 6H-SIC(0001);

D O I：

10.1007/s11664-008-0584-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogen-annealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150A degrees C, with the overall step-terrace arrangement of the surface being preserved but with significant roughness (pit formation) on the terraces. At higher temperatures near 1250A degrees C, the step morphology changes, with the terraces becoming more compact. At 1350A degrees C and above, the surface morphology changes into relatively large flat terraces separated by step bunches. Features believed to arise from grain boundaries in the graphene are resolved on the terraces, as are fainter features attributed to atoms at the buried graphene/SiC interface.

引用

页码：718 / 724

页数：7

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