Room-temperature type-II W quantum well diode laser with broadened waveguide emitting at λ=3.30 μm

被引：41

作者：

Lee, H

Olafsen, LJ

Menna, RJ

Bewley, WW

Martinelli, RU

Vurgaftman, I

Garbuzov, DZ

Felix, CL

Maiorov, M

Meyer, JR

Connolly, JC

Sugg, AR

Olsen, GH

机构：

[1] Sarnoff Corp, Princeton, NJ 08543 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Senors Unlimited, Princeton, NJ 08540 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 20期

关键词：

D O I：

10.1049/el:19991204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A mid-IR type-II 'W' quantum well diode laser (lambda = 3.30 mu m) with a broadened waveguide operated in pulsed mode at 300K is presented. The spectral width at that temperature was 12nm, and the peak output power was 2mW/facet. The characteristic temperature T-0 for the range 100-280K was 48K.

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收藏

页码：1743 / 1745

页数：3

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共 10 条

[1] High-temperature continuous-wave 3-6.1 μm "W'' lasers with diamond-pressure-bond heat sinking [J].

Bewley, WW ;

Felix, CL ;

Vurgaftman, I ;

Stokes, DW ;

Aifer, EH ;

Olafsen, LJ ;

Meyer, JR ;

Yang, MJ ;

Shanabrook, BV ;

Lee, H ;

Martinelli, RU ;

Sugg, AR .

APPLIED PHYSICS LETTERS, 1999, 74 (08) :1075-1077

[2] High-temperature type-II superlattice diode laser at λ=2.9 μm [J].

Bewley, WW ;

Aifer, EH ;

Felix, CL ;

Vurgaftman, I ;

Meyer, JR ;

Lin, CH ;

Murry, SJ ;

Zhang, D ;

Pei, SS .

APPLIED PHYSICS LETTERS, 1997, 71 (25) :3607-3609

[3] Infrared (4-11 mu m) quantum cascade lasers [J].

Capasso, F ;

Faist, J ;

Sirtori, C ;

Cho, AY .

SOLID STATE COMMUNICATIONS, 1997, 102 (2-3) :231-236

[4] DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 3-MU-M WITH A METASTABLE GAINASSB ACTIVE LAYER AND ALGAASSB CLADDING LAYERS [J].

CHOI, HK ;

EGLASH, SJ ;

TURNER, GW .

APPLIED PHYSICS LETTERS, 1994, 64 (19) :2474-2476

[5] 175 K continuous wave operation of InAsSb/InAIAsSb quantum-well diode lasers emitting at 3.5 mu m [J].

Choi, HK ;

Turner, GW ;

Manfra, MJ ;

Connors, MK .

APPLIED PHYSICS LETTERS, 1996, 68 (21) :2936-2938

[6] Midinfrared vertical-cavity surface-emitting laser [J].

Felix, CL ;

Bewley, WW ;

Vurgaftman, I ;

Meyer, JR ;

Goldberg, L ;

Chow, DH ;

Selvig, E .

APPLIED PHYSICS LETTERS, 1997, 71 (24) :3483-3485

[7] Temperature dependence of continuous wave threshold current for 2.3-2.6 μm InGaAsSb AlGaAsSb separate confinement heterostructure quantum well semiconductor diode lasers [J].

Garbuzov, D ;

Maiorov, M ;

Lee, H ;

Khalfin, V ;

Martinelli, R ;

Connolly, J .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :2990-2992

[8] Recent advances in Sb-based midwave-infrared lasers [J].

Hasenberg, TC ;

Miles, RH ;

Kost, AR ;

West, L .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (08) :1403-1406

[9] TYPE-II QUANTUM-WELL LASERS FOR THE MIDWAVELENGTH INFRARED [J].

MEYER, JR ;

HOFFMAN, CA ;

BARTOLI, FJ ;

RAMMOHAN, LR .

APPLIED PHYSICS LETTERS, 1995, 67 (06) :757-759

[10] Near-room-temperature mid-infrared interband cascade laser [J].

Olafsen, LJ ;

Aifer, EH ;

Vurgaftman, I ;

Bewley, WW ;

Felix, CL ;

Meyer, JR ;

Zhang, D ;

Lin, CH ;

Pei, SS .

APPLIED PHYSICS LETTERS, 1998, 72 (19) :2370-2372