ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy

被引：30

作者：

Hsiao, C. H. ^{[1
,2
]}

Chang, S. J. ^{[1
,2
]}

Wang, S. B. ^{[1
,2
]}

Chang, S. P. ^{[1
,2
]}

Li, T. C. ^{[3
]}

Lin, W. J. ^{[3
]}

Ko, C. H. ^{[4
]}

Kuan, T. M. ^{[4
]}

Huang, B. R. ^{[5
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Ctr Micro Nano Sci & Technol, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[3] Chung Shan Inst Sci & Technol, Mat & Electroopt Res Div, Tao Yuan 325, Taiwan

[4] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

[5] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 106, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 04期

关键词：

II-VI semiconductors; molecular beam epitaxial growth; nanowires; photodetectors; zinc compounds; MSM PHOTODETECTORS; GROWTH;

D O I：

10.1149/1.3077580

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We reported the growth of ZnSe nanowires on oxidized Si substrate by molecular-beam epitaxy. It was found that average length, average diameter, and density of the ZnSe nanowires were 1.2 mu m, 48 nm, and 1.04x10(7) cm(-2), respectively. It was also found that the ZnSe nanowires were structurally uniform and defect-free with a pure zinc blend structure. UV photodetectors were then fabricated by sputtering a thick Au film through an interdigitated shadow mask onto the ZnSe nanowires. It was found that photocurrent to dark current contrast ratio of our ZnSe nanowire photodetector was >90 with 0.1 V applied bias.

引用

页码：J73 / J76

页数：4

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