Effect of a High-κ Environment on Charge Carrier Mobility in Graphene

被引：314

作者：

Ponomarenko, L. A. ^{[1
]}

Yang, R. ^{[1
]}

Mohiuddin, T. M. ^{[1
]}

Katsnelson, M. I. ^{[2
]}

Novoselov, K. S. ^{[1
]}

Morozov, S. V. ^{[1
,3
]}

Zhukov, A. A. ^{[1
]}

Schedin, F. ^{[1
]}

Hill, E. W. ^{[1
]}

Geim, A. K. ^{[1
]}

机构：

[1] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

[2] Radboud Univ Nijmegen, Inst Mol & Mat, NL-6525 AJ Nijmegen, Netherlands

[3] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 20期

基金：

英国工程与自然科学研究理事会;

关键词：

SUSPENDED GRAPHENE; TRANSISTOR; SCATTERING; TRANSPORT;

D O I：

10.1103/PhysRevLett.102.206603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is widely assumed that the dominant source of scattering in graphene is charged impurities in a substrate. We have tested this conjecture by studying graphene placed on various substrates and in high-kappa media. Unexpectedly, we have found no significant changes in carrier mobility either for different substrates or by using glycerol, ethanol, and water as a top dielectric layer. This suggests that Coulomb impurities are not the scattering mechanism that limits the mean free path attainable for graphene on a substrate.

引用

页数：4

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