InGaN/GaN light emitting diodes with a p-down structure

被引：25

作者：

Su, YK

Chang, SJ

Ko, CH

Chen, JF

Kuan, TM

Lan, WH

Lin, WJ

Cherng, YT

Webb, J

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Chung Shan Inst Sci & Technol, Mat Res & Dev Ctr, Taoyuan, Taiwan

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2002年 / 49卷 / 08期

关键词：

double crystal X-ray diffraction (DCXRD); electroluminescence (EL); InGaN/GaN; light emitting diodes (LEDs); multiquantum well (MQW); p-down; photoluminescence (PL);

D O I：

10.1109/TED.2002.801277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Nitride-based p-down blue light emitting diodes (LEDs) were successfully fabricated. It was found that we could improve the crystal quality of these nitride-based p-down LEDs by inserting a codoped interlayer between the p-type cladding layer and MQW active layers. It was also found that the turn-on voltage could be reduced from 15 V to less than 5 V for the p-down LED with codoped layer and tunnel layer. The 20 mA output power was 1 mW for the p-down LED with an Mg + Si codoped interlayer and a rough p-tunnel layer.

引用

页码：1361 / 1366

页数：6

共 12 条

[1] Electrical characterization of isoelectronic In-doping effects in GaN films grown by metalorganic vapor phase epitaxy [J].