Origin of diameter-dependent growth direction of silicon nanowires

被引：51

作者：

Wang, C. X. ^{[1
]}

Hirano, Masahiro ^{[1
]}

Hosono, Hideo ^{[1
]}

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

NANO LETTERS | 2006年 / 6卷 / 07期

关键词：

D O I：

10.1021/nl060096g

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A nucleation thermodynamic model was developed to clarify the diameter-dependent crystallographic orientation of silicon nanowires (SiNWs) grown via the vapor-liquid-solid (VLS) mechanism with an Au catalyst. The calculated critical energies (E-r*) and corresponding critical radii (r*) of the SiNWs with < 111 > and < 110 > orientations as a function of Au-catalyst size (D-Au) revealed that the < 110 >-oriented SiNW with r* is preferred below D-Au = similar to 25 nm, but the preferred direction changes to < 111 > above D-Au = similar to 25 nm. The model indicated that the nucleated SiNW with a radius (r) above r* is stable and continues to grow until the diameter becomes equal to D Au but that the crystallographic orientation is maintained. Thus, the predicted growth direction of the final SiNW with a size of D Au is < 110 > for D-Au < similar to 25 nm and < 111 > for D-Au > similar to 25 nm, which is in excellent agreement with reported experimental results.

引用

页码：1552 / 1555

页数：4

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