Successful surface passivation of air-exposed AlGaAs by a silicon interface control layer-based technique

被引：5

作者：

Ikeya, K ^{[1
]}

Hashizume, T ^{[1
]}

Hasegawa, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV, GRAD SCH ELECT & INFORMAT ENGN, SAPPORO, HOKKAIDO 060, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1997年 / 36卷 / 3B期

关键词：

surface passivation; Si interface control layer; surface treatment; native oxide; HCl; AlGaAs; XPS; PL;

D O I：

10.1143/JJAP.36.1756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to make the silicon interface control layer (Si ICL)-based surface passivation technique applicable to air-exposed AlGaAs surfaces, various surface treatments were systematically studied. The treatments investigated include UHV thermal cleaning, (NH4)(2)S-x treatment, HCl treatment and H-2 plasma treatment. Chemical status and quality of the treated surfaces were evaluated by in-situ and ex-situ X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements. A strong correlation was found between the band-edge PL intensity and the amount of surface oxide components, in particular Al-oxides. Marked reduction of the amount of oxide components and enhancement of PL intensity were realizable by a combination of HCl surface treatment and Si ICL formation.

引用

页码：1756 / 1762

页数：7

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